Semnan University Press Journal of Modeling in Engineering 2008-4854 15 50 2017 09 23 Modeling and Simulation Buckling Behavior of Silicon and Nanowires Using the Structural Mechanics Approach Method Modeling and Simulation Buckling Behavior of Silicon <100> and <111> Nanowires Using the Structural Mechanics Approach Method 85 93 2553 10.22075/jme.2017.2553 FA Amin Yasini Journal Article 2012 10 15 In this research, Si and nanowires with different lengths between 0.5 to 20 nm and thicknesses between 1 to 4 nm, are investigated by using structural mechanics approach and numerical method by ABAQUS software. DREIDING force field is used for force field. In this analysis critical buckling load are calculated. The results of this study show that critical load in ratio of the length of the nanowire thickness less than 10 will be diverted from the Euler equation. The same thickness and length, Si nanowires had the maximum critical buckling load. this method in comparison of other than methods such as molecular dynamics has higher analyzing speed and suitable accuracy. In this research, Si and nanowires with different lengths between 0.5 to 20 nm and thicknesses between 1 to 4 nm, are investigated by using structural mechanics approach and numerical method by ABAQUS software. DREIDING force field is used for force field. In this analysis critical buckling load are calculated. The results of this study show that critical load in ratio of the length of the nanowire thickness less than 10 will be diverted from the Euler equation. The same thickness and length, Si nanowires had the maximum critical buckling load. this method in comparison of other than methods such as molecular dynamics has higher analyzing speed and suitable accuracy. https://modelling.semnan.ac.ir/article_2553_51da8c852fe8188542ed79cc2546794e.pdf