In this paper, a new silicon-on-insulator (SOI) device structure is proposed to reduce self-heating effects. Using Si3N4 material is main idea in the structure that has high thermal conductivity respect to silicon dioxide. The device has been verified in two-dimensional device simulation. The results show that the structure provides a new path to reduce the temperature of the channel of SOI Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) and decreases the temperature in the channel.
Orouji, , & Heydari, (2010). DESIGN AND SIMULATION OF A MULTILAYER SOI-MOSFET STRUCTURE FOR IMPROVING SELF-HEATING EFFECTS. Journal of Modeling in Engineering, 8(23), 19-23. doi: 10.22075/jme.2017.1571
MLA
Orouji; Heydari. "DESIGN AND SIMULATION OF A MULTILAYER SOI-MOSFET STRUCTURE FOR IMPROVING SELF-HEATING EFFECTS". Journal of Modeling in Engineering, 8, 23, 2010, 19-23. doi: 10.22075/jme.2017.1571
HARVARD
Orouji, , Heydari, (2010). 'DESIGN AND SIMULATION OF A MULTILAYER SOI-MOSFET STRUCTURE FOR IMPROVING SELF-HEATING EFFECTS', Journal of Modeling in Engineering, 8(23), pp. 19-23. doi: 10.22075/jme.2017.1571
VANCOUVER
Orouji, , Heydari, DESIGN AND SIMULATION OF A MULTILAYER SOI-MOSFET STRUCTURE FOR IMPROVING SELF-HEATING EFFECTS. Journal of Modeling in Engineering, 2010; 8(23): 19-23. doi: 10.22075/jme.2017.1571
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