4H-SiC MESFET with darin-side and undoped region for modifying charge distribution and high power applications

Authors

semnan university

Abstract

In this paper, a novel MESFET with an undoped region (DS-UR) and drain side-double recessed 4H-SiC metal semiconductor field effect transistor (MESFET) is presented. The key idea in this work is to modify the charge concentration and electric field distribution to improving breakdown voltage (VBR) and the maximum output power density (Pmax). The charge distribution plays an important role in determining device characteristics. Two-dimensional and two-carrier device simulation demonstrate that the VBR and Pmax are improved about 57% and 50% compared to source side-double recessed 4H-SiC MESFET (SS) structure, respectively which are important for high power applications.

Keywords

References

 
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Journal of Modeling in Engineering
Volume 13, Issue 43
January 2016
Pages 121-127

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History

  • Receive Date: 28 January 2017
  • Revise Date: 16 September 2017
  • Accept Date: 28 January 2017

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