A new tunneling carbon nanotube field effect transistor with linear doping profile at drain region: numerical simulation study

Document Type : Research Paper

Authors

1 university

2 Electrical engineering department, Energy faculty, Kermanshah University of Technology

Abstract

For the first time, a new structure is proposed for tunneling CNTFET (T-CNTFET). In this new structure, the drain region is divided into two parts, and the part near the channel has a linear doping profile. This new structure is called T-CNTFET with linear doping in drain (LD-T-CNTFET). The obtained results using a non-equilibrium Green’s function (NEGF) method show that the LD-T-CNTFET compared with conventional T-CNTFET leads to increase in ON current, reduction in OFF current, increasing current ratio, reducing sub-threshold swing, reducing power consumption and increasing the transistor speed. In addition to the mentioned benefits, the LD-T-CNTFET structure increases the cutoff frequency in comparison with conventional T-CNTFET structure. Therefore, it can be said that LD-T-CNTFET is a proper structure for the applications with low power consumption and high speed.

Keywords

References

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Journal of Modeling in Engineering
Volume 16, Issue 52
March 2018
Pages 109-117

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History

  • Receive Date: 29 September 2015
  • Revise Date: 26 April 2016
  • Accept Date: 07 June 2016

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