Improving Performance of Germanium-Based Vertical Tunneling Field Effect Transistor Using GaAs as Channel

Document Type : Power Article

Authors

1 Assistant Professor, Department of Electrical Engineering, Hamedan University of Technology, Hamedan, Iran

2 MSc, Department of Electrical Engineering, Hamedan University of Technology, Hamedan, Iran

3 Professor, Department of Electrical Engineering, Bu-Ali Sina University, Hamedan, Iran

Abstract

In this paper, Germanium-based vertical tunneling transistors are investigated and the electrical properties of the transistor in two modes of Germanium utilization as well as Gallium Arsenide as the channel are compared. The simulation of this transistor was performed by Silvaco software using non-local tunneling model. The results show that more ON-current, less OFF-current and less bipolar current at negative gate voltage are the advantages of using Gallium Arsenide instead of Germanium as the channel. In the following, the channel parameters are changed and the effect of their change on the behavior of the transistor is studied. Increasing the channel length reduces the Off-current and increases the On-current to Off-current ratio, as well as reducing the sub-threshold slope. On the other hand, increasing the channel width reduces On-current to Off-current ratio and increases the sub-threshold slope. The On-current to Off-current ratio increases with increasing channel length and decreasing channel width, and increases to 1.5 × 10 + 15.
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Keywords

Main Subjects

References

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Journal of Modeling in Engineering
Volume 22, Issue 76
May 2024
Pages 115-122

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History

  • Receive Date: 04 March 2022
  • Revise Date: 03 April 2023
  • Accept Date: 01 October 2023

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