[1] Hjelmgrn, H., Allerstam F., Andersson, K., Nilsson, P. A., and Rorsman N.( 2010). ” Transient simulation of microwave, SiC MESFETs with improved trap models,” IEEE Trans.Electron Devices, vol. 57, pp. 729–32.
[2] Sriram, S., Hagleitner, H., Namishia, D., Alcorn, T., Smith T., and Pulz, B. (2009). “High-gain SiC MESFETs using source-connected field plates”, IEEE Trans. Electron Devices, vol. 30, pp. 952–3.
[3] Zhu, C.L., Rusli E., and Zhao P., (2007). “Dual-channel 4H-SiC metal semiconductor field effect transistors,” Solid-StateElectron, vol. 51, pp. 343–4.
[4] Rusli, E., Zhu, C.L., Zhao, P., and Xia J. H., (2006). “Characterization of SiC MESFETs with narrow channel layer”, Microelectron. Eng, vol. 83, pp. 72–4.
[5] Zhang, J., Ye, Y., Zhou, C., Luo, X., Zhang, B., and Li, Z., (2008). “High breakdown voltage 4H-SiC MESFETs with floating metal strips,” Microelectron. Eng, vol. 85, pp. 89–92.
[6] Deng, X., Zhang, B., Li, Z., and Chen, Z., (2008).”Two-dimensional analysis of the surface state effects in 4H-SiC MESFETs,” Microelectron. Eng, vol. 85, pp. 295–9.
[7] Zeinab Ramezan
i,
Ali A. Orouji,
P. Keshavarzi,) 2014 .(”A novel double-recessed 4H-SiC MESFET Using Scattering the Electric Field for High Power and RF Applications”
Physica E: Low-dimensional Systems and Nanostructures, vol. 59, pp. 202–209.
[8] Amirhossein Aminbeidokhti and Ali A. Orouji, )2012(. “A new double-recessed 4H-SiC MESFET with superior RF characteristics, International Journal of Electronics, pp. 1-9.
[9] Zhu, C.L., Rusli, E., Tin, C.C, Zhang, G. H., Yoon, S.F., and Ahn, J., (2006). “Improved performance of SiC MESFETs using double-recessed structure,” Microelectron. Eng, vol. 83, pp. 92–5.
[10] ATLAS user’s manual: Device simulation software, (2012). Silvaco International.
[11] Ruff, M., Mitlehner, H., and Helbig, R., (1994). “ SiC devices: physics and numerical simulation,” IEEE Trans. Electron Devices, vol. 41, pp. 1040–54.
[12] Baliga, B.J., (1987). Modern Power Devices (New York: Wiley Interscience).
[13] Mahabadi, S.E.J., Orouji, A. A, Keshavarzi, P.,and Moghadam, H. A, (2011). ”A new partial SOI-LDMOSFET with a modified buried oxide layer for improving self-heating and breakdown voltage,” Semicond. Sci. Technol, vol. 26, pp. 95005–16.
[14] Zhang, J., Luo, X., Li, Z., and Zhang, B., (2007). “Improved double-recessed 4H-SiC MESFETs structure with recessed source/drain drift region,” Microelectron. Eng, vol. 84, pp. 2888–91.
[15] Orouji, A. A., Aminbeidokhti, A., (2011). “A novel double-recessed 4H-SiC MESFET with partly undoped space region,” Superlattices and Microstructures, vol. 50, pp. 680–690.
[16] Sze, S.M., Ng, K.K., (2007). Physics of Semiconductor Devices, third ed., John Wiley & Sons, New Jersey, pp. 386–398.
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