D. L. Pulfrey, and L. Chen, "Comparison of p-i-n and n-i-n carbon nanotube FETs regarding high-frequency performance", Solid-State Electronics, Vol. 53, NO. 9, September 2009, pp. 935-939.
 S. O. Koswatta, D. E. Nikonov, and M. S. Lundstrom, "Computational study of carbon nanotube p-i-n tunnel FETs", InElectron Devices Meeting, IEDM Technical Digest. IEEE International, December 2005, pp. 518-521.
 A. Naderi, and P. Keshavarzi, "Novel carbon nanotube field effect transistor with graded double halo channel", Superlattices and Microstructures, Vol. 51, NO. 5, May 2012, pp. 668-679.
 S. Poli, S. Reggiani, A. Gnudi, E. Gnani and E. Baccarani, "Computational study of the ultimate scaling limits of CNT tunneling devices", IEEE Transactions on Electron Devices, Vol. 55, NO. 1, January 2008, pp. 313-321.
 L. Leem, A. Srivastava S. Li, B. Magyari-Köpe, G. Iannaccone, J. S. Harris, and G. Fiori, "Multi-scale simulation of partially unzipped CNT hetero-junction tunneling field effect transistor", InElectron Devices Meeting (IEDM), IEEE International, December 2010, pp. 32-35.
 W. Y. Choi, B. G. Park, J. D. Lee, and T. J. K. Liu, "Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec", IEEE Electron Device Letters, Vol. 28, NO. 8, August 2007, pp. 743-745.
 M. Pourfath, H. Kosina, and S. Selberherr, "Tunneling CNTFETs", Journal of Computational Electronics, Vol. 6, NO. 1-3, September 2007, pp. 243-246.
 H. Wang, S. Chang, Y. Hu, H. He, J. He, Q. Huang F. He, and G. Wang, "A Novel Barrier Controlled Tunnel FET", IEEE Electron Device Letters, Vol. 35, NO. 7, July 2014, pp. 798-800.
 M. Ossaimee, S. Gamal, and A. Shaker, "Gate dielectric constant engineering for suppression of ambipolar conduction in CNTFETs", Electronics Letters, Vol. 51, NO. 6, March 2015, pp. 503-504.
 O. M. Nayfeh, C. N. Chleirigh, J. Hennessy, L. Gomez, J. L. Hoyt, and D. A. Antoniadis, "Design of tunneling field-effect transistors using strained-silicon/strained-germanium type-II staggered heterojunctions", IEEE Electron Device Letters, Vol. 29, NO. 9, September 2008, pp. 1074-1077.
 V. Nagavarapu, R. Jhaveri, and J. C. Woo, "The tunnel source (PNPN) n-MOSFET: A novel high performance transistor", IEEE Transactions on Electron Devices, Vol. 55, NO. 4, April 2008, pp. 1013-1019.
 S. Saurabh, and M. Kumar, "Novel attributes of a dual material gate nanoscale tunnel field-effect transistor", IEEE transactions on Electron Devices, Vol. 58, NO. 2, February 2011, pp. 404-410.
 R. Yousefi, and S. S. Ghoreyshi, "Numerical Study of Ohmic-Schottky Carbon Nanotube Field Effect Transistor", Modern Physics Letters B, Vol. 26, NO. 15, June 2012, pp. 1250096.
 Z. Jamalabadi, P. Keshavarzi, and A. Naderi, "SDC-CNTFET: stepwise doping channel design in carbon nanotube field effect transistors for improving short channel effects immunity", International Journal of Modern Physics B, Vol. 28, NO. 7, March 2014, pp. 1450048-1-1450048-17.
 R. Yousefi, K. Saghafi, and M. K. Moravvej-Farshi, "Numerical Study of Lightly Doped Drain and Source Carbon Nanotube Field Effect Transistors", IEEE Transactions on Electron Devices, Vol. 57, NO. 4, April 2010, pp. 765-771.
 J. Guo, A. Javey, H. Dai, and M. Lundstrom, "Performance analysis and design optimization of near ballistic carbon nanotube field-effect transistor", InElectron Devices Meeting, IEDM Technical Digest. IEEE International, December 2004, pp. 703-706.
 A. A. Orouji, and Z. Arefinia, "Detailed simulation study of a dual material gate carbon nanotube field-effect transistor", Physica E: Low-dimensional Systems and Nanostructures, Vol. 41, NO. 4, February 2009, pp. 552-557.
 W. Wang, T. Zhang, L. N. Li, G. Yue, and x. Yang, "High-frequency and switching performance investigations of novel lightly doped drain and source hetero-material-gate CNTFET", High-frequency and switching performance investigations of novel lightly doped drain and source hetero-material-gate CNTFET, Vol. 21, May 2014, pp. 132-139.