طراحی اینورتر گرافنی یکپارچه و مدل سازی ماتریس انتقال آن

نوع مقاله : مقاله برق

نویسندگان

1 استادیار دانشکده فنی- مهندسی، واحد اسلامشهر، دانشگاه آزاد اسلامی، اسلامشهر، ایران

2 گروه الکترونیک، دانشکده مهندسی برق، رایانه و مهندسی پزشکی، دانشگاه آزاد اسلامی واحد قزوین

چکیده

ابتدا ساختار یکپارچه ای برای اینورتر گرافنی شامل ترانزیستور اثر میدان گرافنی و خط ارتباطی گرافنی ارائه می شود. دلیل ارائه ساختار یکپارچه برای اینورتر گرافنی حذف مقاومتهای اتصال اهمی، شاتکی و اثرات پارازیتی در محل اتصال خطوط ارتباطی فلزی متداول به گیت، سورس و درین ترانزیستور است.
سپس با استفاده از مدل مداری ادوات گرافنی به کار رفته در ساختار پیشنهادی، مدل ماتریس انتقال مدار اینورتر گرافنی یکپارچه استخراج می شود. در مدل مداری ترانزیستور و خط ارتباطی و به تبع آن در ماتریس انتقال کلی اینورتر گرافنی یکپارچه، اثرات سلفی- خازنی و انواع پراکندگی ها لحاظ شده است.
حذف مقاومتهای اتصال اهمی، شاتکی و اثرات پارازیتی باعث افزایش سرعت کاری اینورتر خواهد شد و استخراج ماتریس انتقال اینورتر گرافنی یکپارچه و محاسبه نمودارهای حوزه زمان، پایداری نسبی و پهنای باند فرکانسی موید این بهبود است. مزیت مدل ماتریس انتقال اینورتر پیشنهادی این است که هر گونه تغییر در پارامترهای فیزیکی نانونوارهای گرافنی به کار رفته در ساختار به سادگی در مدل مداری و روابط ماتریس انتقال وارد می‌شود و می‌توان اثرات ناشی از آنها را در کلیه ابعاد و تکنولوژیها بررسی کرد. با استفاده از مدل مداری و ماتریس انتقال استخراج شده می‌توان انواع تحلیلهای پایداری نظیر نایکوئیست، بد، نیکولز و پاسخهای حوزه زمان - فرکانس اینورترهای گرافنی یکپارچه مورد استفاده در مدارات با مقیاس بزرگ را محقق کرد.

کلیدواژه‌ها


عنوان مقاله [English]

Design of seamless graphene inverter together with its transfer matrix modeling

نویسندگان [English]

  • somayeh fotoohi 1
  • saeed haji-nasiri 2
1 Department of Electrical Engineering, Islamshahr Branch, Islamic Azad University, Islamshahr, Iran
2 Faculty of Electrical, Biomedical and Mechatronics Engineering, Qazvin Branch, Islamic Azad University, Qazvin, Iran
چکیده [English]

Abstract:
A seamless graphene inverter including graphene nanoribbon field effect transistor (GNRFET) and graphene interconnect is proposed. The seamless structure is suggested to eliminate the ohmic, schottky, and parasitic resistances in the junction of the traditional interconnects with the Gate, Source and Drain of GNRFET.
After that, using the circuit models of the graphene devices that are used in the proposed structure, transfer matrix model of the proposed seamless graphene inverter is calculated and extracted. All of the capacitive, inductive and scattering effects are included in the assumed circuit models of the GNRFET - graphene interconnect and consequently in the overall matrix model of the seamless graphene inverter.
Elimination of the ohmic, schottky and parasitic resistances causes to improve in the working speed of the proposed inverter. Extraction of the transfer matrix model of the seamless graphene inverter and calculation of its step time response, relative stability and frequency bandwidth confirms this improvement. The advantage of the transfer matrix model of the proposed inverter is that any change in the physical parameters of the graphene nanoribbons that are used in the structure can be included in the model and one can analyze the effect of it in all of the technology nodes. Using the circuit model and the extracted transfer matrix, anyone can evaluates various stability analyses such as Nyquist, Bode and Nichols together with the time-frequency responses of the graphene seamless inverter used in very large scale integrated (VLSI) circuits.

کلیدواژه‌ها [English]

  • Graphene
  • inverter
  • interconnect
  • stability
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