بررسی تاثیر لایه بافر اکسید دوفلزی ZnGeO بر عملکرد سلول خورشیدی مبتنی بر اکسید مس بکمک شبیه سازی عددی

نوع مقاله : مقاله برق

نویسندگان

گروه برق و الکترونیک، دانشکده مهندسی برق و کامپیوتر، دانشگاه حکیم سبزواری

چکیده

در این مقاله تاثیر ترکیب اکسید دو فلزی روی ژرمانیوم (Zn1-xGexO) بعنوان لایه بافر در عملکرد و راندمان سلولهای خورشیدی با لایه جاذب اکسید مس (Cu2O) بررسی میشود. پارامترهای فیزیکی مدل سلول خورشیدی منطبق بر داده های تجربی انتخاب و سپس لایه جدید بافر ZnGeO بر اساس پارامترهای درون یابی شده سطوح انرژی ساختار نوار از ترکیبات دوتایی ZnO و GeO2 محاسبه شد تا امکان مطالعه عملکرد سلول خورشیدی در کل ترکیب ژرمانیوم را فراهم کند. ابتدا دقت مدل اولیه سلول خورشیدی با مقایسه مشخصات الکتریکی آن با مقادیر تجربی راستی آزمایی گردید. سپس ویژگیهای مدل اولیه با افزودن لایه بافر تحلیل و مشخصه یابی شد. با بررسی بازدهی سلول در بازه تغییرات x بافر (%35 تا %75 ژرمانیوم)، حداقل بازده31/5% در 35/0و حداکثر 02/7% در 65/0 x = بدست آمد. با ترکیب بافر Zn0.35Ge0.65O جریان اتصال کوتاه سلول 15/11 میلی آمپر و ولتاژ مدارباز آن 08/1 ولت محاسبه گردید.

کلیدواژه‌ها

موضوعات

عنوان مقاله [English]

Numerical Study of the Influences of ZnGeO Buffer on Electrical Features of Cu2O Solar Cell

نویسندگان [English]

  • Najme Khezriyan
  • MH Shahrokh Abadi
Electrical and Computer Engineering Faculty, Hakim Sabzevari University, Sabzevar, Iran
چکیده [English]

In this paper, the effect of germanium content in Zn1-xGexO as a buffer layer on the performance and efficiency of a solar cell based copper oxide (Cu2O) is investigated. The physical parameters of the solar cell model were selected according to the experimental data and then the new parameters of ZnGeO buffer layer was calculated based on the interpolated parameters of the energy levels of the band structure of binary compounds ZnO and GeO2 to study the solar cell performance for the germanium composition, ranged from 0.35 to 0.75. First, the accuracy of the initial model of the solar cell was verified by comparing its electrical characteristics with experimental data. Then, the characteristics of the initial model were analyzed and characterized in presence of buffer layer. By examining the cell efficiency for the changes of buffer composition (35% to 75% germanium), the minimum efficiency was observed 5.31% at x = 0.35 and the maximum was 7.02% at x = 0.65. The results show that using Zn0.35Ge0.65O buffer, the short circuit current of the cell reaches 11.15 mA with an open circuit voltage up to 1.08 volts.

کلیدواژه‌ها [English]

  • Solar cell
  • Photovoltaic cell
  • Cu2O
  • ZnGeO
  • Metal oxide

مراجع

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مدل سازی در مهندسی
دوره 20، شماره 71
دی 1401
صفحه 113-119

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سابقه مقاله

  • تاریخ دریافت: 27 دی 1400
  • تاریخ بازنگری: 20 اردیبهشت 1401
  • تاریخ پذیرش: 29 خرداد 1401

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