طراحی و پیاده‌سازی اینورتر 13 سطحی کلیدزنی خازنی بهبودیافته با تعداد ادوات کمتر

نوع مقاله : مقاله پژوهشی

نویسندگان

1 گروه مهندسی برق، دانشکده فنی و مهندسی، دانشگاه محقق اردبیلی، اردبیل، ایران

2 دانشکده فناوری و نوآوری، دانشگاه واسا، واسا، فنلاند

چکیده

در این مقاله یک اینورتر 13 سطحی کلیدزنی خازنی با بهره ولتاژ 3 پیشنهاد شده است. ساختار پیشنهادی، خروجی 13 سطحی را تنها با استفاده از یک منبع dc، 11 سوئیچ و 3 خازن تولید می‌کند. خازن‌های ساختار پیشنهادی بدون استفاده از مدارات اضافی یا روش کنترلی پیچیده دارای قابلیت تعادل خودکار ولتاژ می‌باشند. همچنین جریان هجومی خازن‌ها با استفاده از یک روش شارژ نرم کاهش یافته است. ساختار پیشنهادی با ساختارهای متفاوت 13 سطحی ارائه شده در تحقیقات اخیر از حیث پارامترهای مختلف مانند تعداد ادوات نیمه‌رسانا، تعداد منابع dc، بهره ولتاژ، حداکثر ولتاژ مسدودکنندگی (MBV) و ولتاژ مسدودکنندگی کل (TSV) مقایسه شده است. با بررسی نتایج این مقایسه قابل بیان است که ساختار پیشنهادی نسبت به دیگر ساختارها به طرز قابل توجهی از تعداد ادوات نیمه رسانای کمتر با TSV و بهره ولتاژ مناسب بهره می‌برد. از مزایای دیگر ساختار پیشنهادی نیز می‌توان به عدم استفاده از دیود و همچنین مقرون به صرفه بودن آن اشاره کرد. علاوه بر این تلفات توان ساختار پیشنهادی ارزیابی شده و راندمان آن برای توان‌های خروجی مختلف محاسبه شده است. در نهایت، کارایی ساختار پیشنهادی توسط شبیه‌سازی و پیاده‌سازی آزمایشگاهی آن تحت شرایط پایدار و همچنین شرایط دینامیکی مختلف تایید شده است.

کلیدواژه‌ها

موضوعات

عنوان مقاله [English]

Design and Implementation of an Improved Thirteen Level Switched Capacitor Inverter with Less Components

نویسندگان [English]

  • Masumeh Derakhshandeh 1
  • Majid Hosseinpour 1
  • Mahdi Shahparasti 2
1 Department of Electrical Engineering, Faculty of Engineering, University of Mohaghegh Ardabili, Ardabil, Iran
2 School of Technology and Innovations, University of Vaasa, 65200 Vaasa, Finland
چکیده [English]

In this paper, a 13-level switched-capacitor inverter with a voltage gain of 3 is proposed. The proposed structure generates a 13-level output using only one DC source, 11 switches, and 3 capacitors. The capacitors in the proposed structure, without the use of additional circuits or complex control methods, have the capability of self-balancing voltage. Additionally, the inrush current of the capacitors has been reduced using a soft charging method. The proposed structure has been compared with different 13-level structures presented in recent studies in terms of various parameters such as the number of semiconductor devices, the number of DC sources, voltage gain, Maximum Blocking Voltage (MBV), and Total Switching Voltage (TSV). Another advantage of the proposed structure is the non-use of a diode and its cost-effectiveness. In addition, the power losses of the proposed structure have been evaluated, and its efficiency has been calculated for various output powers. Finally, the performance of the proposed structure has been verified through simulation and laboratory implementation under both stable and various dynamic conditions.

کلیدواژه‌ها [English]

  • Multilevel inverter
  • Switched-capacitor
  • Self-balancing voltage
  • Voltage stress of devices

مراجع

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مدل سازی در مهندسی
دوره 23، شماره ویژه 81
جشن پنجاهمین سالگرد تاسیس دانشگاه سمنان
تیر 1404
صفحه 285-301

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  • تاریخ دریافت: 10 آذر 1402
  • تاریخ بازنگری: 22 شهریور 1403
  • تاریخ پذیرش: 11 آذر 1403

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