نویسندگان
چکیده
کلیدواژهها
عنوان مقاله [English]
نویسندگان [English]
In this paper, a new silicon-on-insulator (SOI) device structure is proposed to reduce self-heating effects. Using Si3N4 material is main idea in the structure that has high thermal conductivity respect to silicon dioxide. The device has been verified in two-dimensional device simulation. The results show that the structure provides a new path to reduce the temperature of the channel of SOI Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) and decreases the temperature in the channel.
کلیدواژهها [English]
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