بهبود عملکرد ترانزیستور اثر میدانی نانولوله کربنی تونل‌زنی در حضور ناهمپوشانی

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224 بهبود عملکرد ترانزیستور اثر میدانی نانولوله کربنی تونلی در حضور ناهمپوشانی
مجله مدل سازی در مهندسی سال هفدهم، شماره 59 ، زمستان 1398
[16] A. Shaker, M. Ossaimee, A. Zekry, M. Abouelatta, "Influence of Gate Overlap Engineering on Ambipolar and High Frequency Characteristics of Tunnel-CNTFET", Superlattices and Microstructures, Vol. 86, October 2015, pp. 518–530.
[ 17 [ بهروز عبدی تهنه و علی نادری، "ساختار جدید ترانزیستور اثر میدانی نانو لوله کربنی تونلزنی با دوپینگ خطی در ناحیه درین:
شبیهسازی عددی کوانتومی"، نشریه مدلسازی در مهندسی، دوره 16 ، شماره 52 ، بهار 1397 ، صفحه 109 - 117 .
]18[ علی اصغر اروجی، اکرم عنبر حیدری و زینب رمضانی،" ترانزیستور اثر میدان فلز- نیمه هادی با ناحیه بدون ناخالصی در طرف درین
برای اصلاح چگالی حاملها و کاربردهای توان بالا"، نشریه مدلسازی در مهندسی، دوره 13 ، شماره 43 ، زمستان 1394 ، صفحه 121 -
127 .
]19[ میثم زارعی و مهسا مهراد، " تکنیک نوین برای کاهش اثر خودگرمایی در ترانزیستورهای اثرمیدان با سورس و درین گسترده شده"،
نشریه مدلسازی در مهندسی، دوره 16 ، شماره 53 ، تابستان 1397 ، صفحه 149 - 155 .