سنتز تک لایه نانومتریWS2 با روش رسوب بخار شیمیایی

نوع مقاله : مقاله برق

نویسندگان

1 عضو هیات علمی و مدیر پژوهش و فناوری دانشگاه آزاد یزد

2 دانشکده امام علی (ع)

3 دانشکده فیزیک دانشگاه یزد

چکیده

تک لایه تنگستن دی سولفید (WS2) به دلیل دارا بودن شکاف نوار مستقیم و شدت نوردهی بالا، نوید بخش بسیار خوبی برای استفاده در دستگاه‌های نوری می‌باشد. در این پژوهش، تک لایه WS2 را در شرایط دمایی کنترل شده سنتز و فیلم‌های تولید شده را با استفاده از طیف سنجی مادون قرمز (FT-IR)، رامان، اشعه ایکس (XRD) و تصاویر میکروسکوپ الکترونی روبشی (SEM) مشخصه‌یابی کردیم. نتایج نشان می‌دهد که ورود گاز آرگون به عنوان حامل، باعث بهبود کیفیت لایه شده و سطح رشد WS2 را افزایش می‌دهد و در نتیجه فیلم‌ها ضخامت پوششی متوسط 43 نانومتری را نشان می‌دهند. با کنترل دمایی رشد و ورود به موقع گاز حامل آرگون به طور موثرتری پیش ساز WO3 کاهش یافته و از اکسیداسیون تک لایه‌های سنتز شده محافظت می‌شود. نتایج بدست آمده حاکی از سنتز کامل ساختار دو بعدی تک لایه با صفحات متشکل از اندازه کریستالی حدود 26 نانومتر با ضخامت در حدود 43 نانومتر می‌باشد.

کلیدواژه‌ها

موضوعات

عنوان مقاله [English]

Synthesis of WS2 nanometer monolayer by the chemical vapor deposition method

نویسندگان [English]

  • Maryam Nayeri 1
  • Hamed Taheri 2
  • Fatemeh Ostovari 3
1 Department of Electrical and engineering, Islamic Azad Yazd university, Yazd branch, Yazd, Iran.
2 1Department of Electrical Engineering, Imam Ali Technical University, Technical University of Yazd, Yazd, Iran.
3 Physics Department, Faculty of Science, Yazd University, P.O. Box 89195-741, Yazd, Iran
چکیده [English]

Monolayer WS2 offers great promise for use in optical devices due to its direct bandgap and high photoluminescence intensity. In this way, large-area and high-quality materials are essential for the implementation of technological applications. In this research, we Synthesize the WS2 monolayer under controlled temperature conditions and characterize the films using Fourier-transform infrared spectroscopy (FTIR), Raman, x-ray photoelectron spectroscopies, and scanning electron microscope (SEM). The results show that with the introduction of argon gas as a carrier, the quality of the layer improves, and the growth level of WS2 increases, and as a result, the films show an average coating thickness of 43 nm. By controlling the growth temperature and timely entry of argon-carrying gas, the WO3 precursor is more effectively reduced and the oxidative etching of the synthesized monolayers is protected. The addition of hydrogen more effectively reduces the WO3 precursor and protects against oxidative etching of the synthesized monolayers. The obtained results indicate the complete synthesis of a two-dimensional structure (2D) of a single layer with sheets consisting of a crystal size of about 26 nm with a thickness of about 43 nm.

کلیدواژه‌ها [English]

  • monolayer
  • WS2
  • CVD method
  • Raman spectroscopy

مراجع

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مدل سازی در مهندسی
دوره 21، شماره 73
تیر 1402
صفحه 63-69

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