بهبود عملکرد ترانزیستور تونل زنی عمودی مبتنی بر ژرمانیوم با به‌کارگیری GaAs به عنوان کانال

نوع مقاله : مقاله برق

نویسندگان

1 استادیار، دانشکده مهندسی برق، دانشگاه صنعتی همدان، همدان، ایران

2 دانشجو، دانشکده مهندسی برق، دانشگاه صنعتی همدان، همدان، ایران

3 استاد، دانشکده مهندسی برق، دانشگاه بوعلی سینا، همدان، ایران

چکیده

در این مقاله‏ ترانزیستور تونل­زنی عمودی مبتنی بر ژرمانیوم بررسی شده­است. ویژگی­های الکتریکی ترانزیستور در دو حالت استفاده از ژرمانیوم و همچنین استفاده از گالیوم-آرسناید به عنوان کانال مقایسه شده و شبیه‌سازی آن توسط نرم‌افزار سیلواکو و با  استفاده از مدل تونل­زنی غیر محلی انجام شده­است. نتایج نشان می‌دهد که جریان روشنایی بیشتر، جریان خاموشی کمتر و جریان دوقطبی درین کمتر در ولتاژ گیت منفی از مزایای استفاده از گالیوم-آرسناید به جای ژرمانیوم  به عنوان کانال است. در ادامه، پارامترهای کانال تغییر داده شده‌اند و اثر تغییر آن‌ها بر روی رفتار ترانزیستور مطالعه شده­است. افزایش طول کانال باعث کاهش جریان خاموشی و افزایش نسبت جریان روشنایی به خاموشی شده و همچنین باعث کاهش شیب زیرآستانه می­شود. از طرف دیگر، افزایش عرض کانال، باعث کاهش نسبت جریان روشنایی به خاموشی و افزایش شیب زیرآستانه می­شود. نسبت جریان روشنایی به خاموشی با افزایش طول کانال و کاهش عرض کانال افزایش می­یابد و این نسبت می­تواند تا 15+10×5/1 افزایش پیدا کند.

کلیدواژه‌ها

موضوعات

عنوان مقاله [English]

Improving Performance of Germanium-Based Vertical Tunneling Field Effect Transistor Using GaAs as Channel

نویسندگان [English]

  • Shoaib Babaei tooski 1
  • Mohammad Javad Rezaei 2
  • Seyed Manoochehr Hoseini 3
1 Assistant Professor, Department of Electrical Engineering, Hamedan University of Technology, Hamedan, Iran
2 MSc, Department of Electrical Engineering, Hamedan University of Technology, Hamedan, Iran
3 Professor, Department of Electrical Engineering, Bu-Ali Sina University, Hamedan, Iran
چکیده [English]

In this paper, Germanium-based vertical tunneling transistors are investigated and the electrical properties of the transistor in two modes of Germanium utilization as well as Gallium Arsenide as the channel are compared. The simulation of this transistor was performed by Silvaco software using non-local tunneling model. The results show that more ON-current, less OFF-current and less bipolar current at negative gate voltage are the advantages of using Gallium Arsenide instead of Germanium as the channel. In the following, the channel parameters are changed and the effect of their change on the behavior of the transistor is studied. Increasing the channel length reduces the Off-current and increases the On-current to Off-current ratio, as well as reducing the sub-threshold slope. On the other hand, increasing the channel width reduces On-current to Off-current ratio and increases the sub-threshold slope. The On-current to Off-current ratio increases with increasing channel length and decreasing channel width, and increases to 1.5 × 10 + 15.
.

کلیدواژه‌ها [English]

  • Vertical transistor
  • Tunneling
  • Silvaco
  • Germanium
  • Gallium arsenide
  • On-current
  • Off-Current

مراجع

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مدل سازی در مهندسی
دوره 22، شماره 76
اردیبهشت 1403
صفحه 115-122

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سابقه مقاله

  • تاریخ دریافت: 13 اسفند 1400
  • تاریخ بازنگری: 14 فروردین 1402
  • تاریخ پذیرش: 09 مهر 1402

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