نوع مقاله : مقاله برق
نویسندگان
1 دانشکده مهندسی برق، دانشگاه صنعتی همدان، همدان، ایران
2 دانشگاه بوعلی سینا همدان
چکیده
کلیدواژهها
موضوعات
عنوان مقاله [English]
نویسندگان [English]
In this paper, Germanium-based vertical tunneling transistors are investigated and the electrical properties of the transistor in two modes of Germanium utilization as well as Gallium Arsenide as the channel are compared. The simulation of this transistor was performed by Silvaco software using non-local tunneling model. The results show that more ON-current, less OFF-current and less bipolar current at negative gate voltage are the advantages of using Gallium Arsenide instead of Germanium as the channel. In the following, the channel parameters are changed and the effect of their change on the behavior of the transistor is studied. Increasing the channel length reduces the Off-current and increases the On-current to Off-current ratio, as well as reducing the sub-threshold slope. On the other hand, increasing the channel width reduces On-current to Off-current ratio and increases the sub-threshold slope. The On-current to Off-current ratio increases with increasing channel length and decreasing channel width, and increases to 1.5 × 10 + 15.
کلیدواژهها [English]
)