طراحی ترانزیستور اثر میدانی تونلی بدون پیوند ناهمگن همراه شده با فناوری Silicon-on-Nothing برای بهبود مشخصات DC

نوع مقاله : مقاله برق

نویسندگان

1 دانشجوی دکتری دانشکده مهندسی برق، دانشگاه آزاد اسلامی تهران غرب، تهران، ایران

2 دانشیار دانشکده مهندسی برق، دانشگاه آزاد اسلامی تهران غرب، تهران، ایران

چکیده

دراین مقاله، ترانزیستور اثر میدانی تونلی‌ بدون پیوند ناهمگن همراه شده با تکنولوژی silicon-on-nothing (SON HS-JLTFET) پیشنهاد می‌شود. ترانزیستور پیشنهادی در مقایسه با ترانزیستور تونل‎زنی بدون پیوند مرسوم دو مزیت دارد. اولین مزیت، یک دهه افزایش در جریان روشنی و بهبود 10 درصدی نوسانات زیر آستانه است که بخاطر استفاده از InAs در ناحیه‌ی سورس می‌باشد. InAs به دلیل انرژی شکاف باند کمتری که نسبت به Si دارد سبب پهنای سد تونل‌زنی کمتر در پیوند سورس/کانال می‌شود. لذا الکترون های بیشتری از سورس به کانال تونل زنی می­کنند. در نتیجه سبب افزایش نرخ تونل‌زنی و بهبود در جریان روشنی و نوسان زیر آستانه می‌شود. مزیت دیگر شامل کاهش جریان ambipolar به کمک تکنیک SON است. در واقع،  air به دلیل ثابت دی الکتریک کمتری که نسبت به اکسید SiO2 دارد میدان الکتریکی را در پیوند درین/کانال کاهش می‌دهد.میدان کاهش یافته سبب پهنای سد بزرگتری می‌شود. لذا جریان ambipolar را کاهش می‌دهد.

کلیدواژه‌ها

موضوعات

عنوان مقاله [English]

A New Heterostructure Junctionless Tunnel Field Effect Transistor with Silicon-on-Nothing Technique for DC Parameter Improvement

نویسندگان [English]

  • Amin Vanak 1
  • Amir Amini 2
1 Doctoral student, Department of Electrical Engineering, College of Technical and Engineering, West Tehran Branch, Islamic Azad University, Tehran, Iran.
2 Associate Professor, Department of Electrical Engineering, College of Technical and Engineering, West Tehran Branch, Islamic Azad University, Tehran, Iran.
چکیده [English]

In this paper, a novel heterostructure junctionless tunnel field effect transistor with silicon-on-nothing technology (SON HS-JLTFET) is proposed. The proposed device has two advantages over conventional JLTFET. First, one decade of increment in the ON current is achieved and subthreshold swing is improved by 10%. In this device, InAs is used in the source region of SON HS-JLTFET which has a lower energy band gap than Si to achieve thinner tunneling barrier width. Hence, more electron can tunnel from source to channel. As a result, it provides improvements in drain current and subthreshold swing. The second advantage is that the ambipolar current reduction due to the use of SON technique. In fact, in this technique, air is considered as the gate dielectric which results in decrement in the electric field in the drain/channel junction. This reduced electric field causes increasing the width of the tunneling barrier which results in lower ambipolar current in the drain/channel junction.
.

کلیدواژه‌ها [English]

  • Tunnel field effect
  • Transistor
  • Subthreshold swing
  • Ambipolar current
  • Heterostructure

مراجع

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مدل سازی در مهندسی
دوره 22، شماره 76
اردیبهشت 1403
صفحه 45-53

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سابقه مقاله

  • تاریخ دریافت: 21 دی 1401
  • تاریخ بازنگری: 27 تیر 1402
  • تاریخ پذیرش: 12 شهریور 1402

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